AO3402 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 52m w r ds(on) (at v gs =4.5v) < 65m w r ds(on) (at v gs =2.5v) < 85m w symbol v ds the AO3402 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g ds sot23 top view bottom view d g s g s d v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl max 0.9 t a =70c junction and storage temperature range -55 to 150 c/w r q ja 70 100 90 c thermal characteristics units parameter typ v drain-source voltage 30 a i d 4 3.2 15 v 12 gate-source voltage t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 1.4 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 63 125 80 maximum junction-to-ambient a g ds sot23 top view bottom view d g s g s d rev 6: jan. 2011 www.aosmd.com page 1 of 5
AO3402 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.5 1 1.5 v i d(on) 15 a 43 52 t j =125c 70 84 47 65 m w 60 85 m w g fs 14 s v sd 0.75 1 v i s 1.5 a c iss 185 235 285 pf c oss 25 35 45 pf c rss 10 18 25 pf r g 2.1 4.3 6.5 w q g (10v) 10 12 nc q g (4.5v) 4.7 nc q gs 0.95 nc q gd 1.6 nc t 3.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =4a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =3.6a v gs =2.5v, i d =2a v gs =4.5v, i d =3a v ds =v gs i d =250 m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters t d(on) 3.5 ns t r 1.5 ns t d(off) 17.5 ns t f 2.5 ns t rr 8.5 11 ns q rr 2.6 3.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =4a, di/dt=100a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =3.75 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =4a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 6: jan. 2011 www.aosmd.com page 2 of 5
AO3402 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 30 40 50 60 70 80 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =2a v gs =4.5v i d =3a v gs =10v i d =4a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.0v 4.5v 10v 3v 2.5v v gs =2.5v 40 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 30 40 50 60 70 80 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =2a v gs =4.5v i d =3a v gs =10v i d =4a 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =4a 25 c 125 c 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.0v 4.5v 10v 3v 2.5v v gs =2.5v rev 6: jan. 2011 www.aosmd.com page 3 of 5
AO3402 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =4a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =4a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =125 c/w rev 6: jan. 2011 www.aosmd.com page 4 of 5
AO3402 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt t - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 6: jan. 2011 www.aosmd.com page 5 of 5
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